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this is information on a product in full production. may 2014 docid18351 rev 9 1/18 strh40n6 rad-hard n-channel 60 v, 30 a power mosfet datasheet - production data figure 1. internal schematic diagram features ? fast switching ? 100% avalanche tested ? hermetic package ? 70 krad tid ? see radiation hardened applications ? satellite ? high reliability description this n-channel power mosfet is developed with stmicroelectronics unique stripfet? process. it has specifically been designed to sustain high tid and provide immunity to heavy ion effects. this power mosfet is fully escc qualified. note: contact st sales office for information about the specific conditions for tape and reel, product in die form and other packages. smd.5 v bdss i d r ds(on) q g 60 v 30 a 36 mohm 43 nc table 1. device summary part numbers escc part number quality level package lead finish mass (g) temp. range eppl STRH40N6S1 - engineering model smd.5 gold 2 -55 to 150c - strh40n6sg 5205/024/01 escc flight target www.st.com
contents strh40n6 2/18 docid18351 rev 9 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7.1 other information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 docid18351 rev 9 3/18 strh40n6 electrical ratings 18 1 electrical ratings (t c = 25 c unless otherwise specified) table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-source voltage (v gs = 0) 60 v v gs (2) 2. this value is guaranteed over the full range of temperature. gate-source voltage 20 v i d (3) 3. rated according to the rthj-case + rthc-s drain current (continuous) at t c = 25c 30 a i d (3) drain current (continuous) at t c = 100c 19 a i dm (4) 4. pulse width limited by safe operating area drain current (pulsed) 120 a p tot (5) 5. rated according to the rthj-case total dissipation at t c = 25c 75 w p tot (3) total dissipation at t c = 25c 66 w dv/dt (6) 6. i sd 40 a, di/dt 1060 a/s, v dd = 80 %v (br)dss peak diode recovery voltage slope 2.5 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case 1.67 c/w rthc-s case-to-sink 0.21 c/w rthj-amb (1) 1. when mounted on heat sink of 300 mm2, t < 10 sec thermal resistance junction -amb 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 15 a electrical ratings strh40n6 4/18 docid18351 rev 9 e as (1) single pulse avalanche energy (starting tj= 25c, id= 20 a, vdd= 40 v) 354 mj e as single pulse avalanche energy (starting tj= 110 c, id= 20 a, vdd= 40 v) 105 e ar repetitive avalanche (vdd = 50 v, i ar = 17.5 a, f = 10 khz, t j = 25 c, duty cycle = 50%) 20 mj repetitive avalanche (vdd = 40 v, i ar = 15 a, f = 100 khz, t j = 25 c, duty cycle = 10%) 1.3 repetitive avalanche (vdd = 40 v, i ar = 15 a, f = 100 khz, t j = 110 c, duty cycle = 10%) 0.4 1. maximum rating value. table 4. avalanche characteristics (continued) symbol parameter value unit docid18351 rev 9 5/18 strh40n6 electrical characteristics 18 2 electrical characteristics (t c = 25 c unless otherwise specified). pre-irradiation table 5. pre-irradiation on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v -100 100 na bv dss (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-to-source breakdown voltage v gs = 0, i d = 1 ma 60 v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on resistance v gs = 12 v, i d = 15 a 0.036 0.045 ? table 6. pre-irradiation dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 25 v, f=1mhz 1312 1640 1968 pf c oss (1) 1. this value is guaranteed over the full range of temperature. output capacitance 281 351 421 pf c rss reverse transfer capacitance 111 139 167 pf q g total gate charge v dd = 30 v, i d = 40 a, v gs =12 v 35 43 52 nc q gs gate-to-source charge 9 11 13 nc q gd gate-to-drain (?miller?) charge 12 15 18 nc r g (2) 2. not tested, guaranteed by process. gate input resistance f=1mhz gate dc bias=0 test signal level= 20 mv open drain 1.04 1.3 1.56 ? electrical characteristics strh40n6 6/18 docid18351 rev 9 table 7. pre-irradiation switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 30 v, i d = 20 a, r g = 4.7 , v gs = 12 v 13 17 21 ns t r rise time 26 59 92 ns t d(off) turn-off-delay time 18 33 48 ns t f fall time 7 11.5 16 ns table 8. pre-irradiation source drain diode (1) 1. refer to the figure 16: source drain diode . symbol parameter test conditions min. typ. max unit i sd source-drain current 30 a i sdm (2) 2. pulse width limited by safe operating area. source-drain current (pulsed) 120 a v sd (3) 3. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 30 a, v gs = 0 1.1 v t rr (4) 4. not tested in production, guaranteed by process. reverse recovery time i sd = 40 a, di/dt = 100 a/s v dd = 48 v, tj = 25 c 288 360 432 ns q rr (4) reverse recovery charge 3.3 c i rrm (4) reverse recovery current 18.2 a t rr (4) reverse recovery time i sd = 40 a, di/dt = 100 a/s v dd = 48 v, tj = 150 c 352 440 529 ns q rr (4) reverse recovery charge 4.4 c i rrm (4) reverse recovery current 19.8 a docid18351 rev 9 7/18 strh40n6 radiation characteristics 18 3 radiation characteristics the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested, using the to-3 package, in total ionizing dose (irradiation done according to the escc 22900 specification, window 1) and single event effect according to the mil-std-750e tm1080 up to a fluence level of 3e+5 ions/cm2. both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (t amb = 22 3 c unless otherwise specified). total dose radiation (tid) testing one bias conditions using the to-3 package: ?v gs bias: + 15 v applied and v ds = 0 v during irradiation the following parameters are measured (see table 9 , tab le 10 and table 11 ): ? before irradiation ? after irradiation ? after 24 hrs @ room temperature ? after 168 hrs @ 100 c anneal table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +20 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v 1.5 -1.5 na bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma -20% v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma -60% / +20% v r ds(on) static drain-source on-resistance v gs = 10 v; i d = 20 a 10% ? table 10. dynamic post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values unit q g total gate charge i g = 1 ma, v gs = 12 v, v ds = 30 v, i ds = 20 a -5% / +50% nc q gs gate-source charge 35% q gd gate-drain charge -5% / +110% radiation characteristics strh40n6 8/18 docid18351 rev 9 single event effect, soa the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to heavy ion environment for single event effect (irradiation per mil-std-750e, method 1080 bias circuit in figure 3: single event effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: ? seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occurs or if the fluence reaches 3e+5 ions/cm2. ? segr test: the gate current is monitored every 100 ms. a gate stress is performed before and after irradiation. stop condition: as soon as the gate current reaches 100 na (during irradiation or during pigs test) or if the fluence reaches 3e+5 ions/cm2. the results are: ? seb immune at 60 mev/mg/cm2 ? segr immune at 60 mev/mg/cm 2 within the safe operating area (soa) given in table 12: single event effect (see), safe operating area (soa) and figure 2: single event effect, soa table 11. source drain diode post-irradiation @ t j = 25 c, (co60 rays 70 k rad(si)) (1) 1. refer to figure 16 . symbol parameter test conditions drift values .unit v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 5% v table 12. single event effect (see), safe operating area (soa) ion let (mev/(mg/cm 2 ) energy (mev) range (m) v ds (v) v gs =0 v gs = -2 v v gs = -5 v v gs = -10 v v gs = -15 v v gs = -20 v kr 32 768 94 60 48 39 27 15 br 38 300 38 45 25 15 15 i 61 330 31 25 15 docid18351 rev 9 9/18 strh40n6 radiation characteristics 18 figure 2. single event effect, soa figure 3. single event effect, bias circuit (a) a. bias condition during radiation refer to table 12: single event effect (see), safe operating area (soa) . 9 g v 9 g v p d [ 9 j v 9 % u 0 h 9 f p e p j , 0 h 9 f p e p j 5 5 & |